Thermal Annealing effect on CdS/Si/ Heterojunction properties

Authors

  • Amer shaker Mahmood

Keywords:

CdS , optical energy gap, grian size, transmittance

Abstract

Cadmium sulphide (CdS) nanoparticles have been successfully
synthesized by a Thermal Evaporation Technique . CdS thin films having
around 100 nm thickness annelid at (200 and 300)
oC which deposited on
glass substrates. The study of X-ray diffraction investigated all the exhibit
polycrystalline nature .Thin film’s internal structure topographical and
optical properties. Furthermore, the crystallization directions of CdS (002)
can be clearly observed through an X-ray diffraction analysis XRD, Atomic
Force Microscope AFM (topographic image) showed that the surface
Characteristics , thin films crystals grew with increases in either the      annealing temperature, also , the grain size increased in range from 88.4 nm
to 96.5 nm. The optical properties concerning the absorption and
transmission spectra were studies for prepared thin films. UV-Vis
measurement spectra showed that Vis transmittance intensity decreased
with increases annealing temperature, the energy band gap decreased from
(2.2 to 2.4) eV when the annealing temperature. Heterojunction
characterization showed that the films are semiconducting and can be used
in solar cell devices.

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Published

2020-09-20

How to Cite

شاكر محمود أ. ع. . (2020). Thermal Annealing effect on CdS/Si/ Heterojunction properties. Mustansiriyah Journal for Sciences and Education, 18(3), 239-250. Retrieved from https://edumag.uomustansiriyah.edu.iq/index.php/mjse/article/view/298

Issue

Section

Research Article