Synthesis of Al/OPS/PS/Si/Al by RTO and its detection properties

Abstract

Porous silicon oxide (PSO) was prepared by rapid-thermal oxidization
(RTO) of porous silicon that was formed on silicon substrate with optimum
conditions. The porosity was approximately (65%) and layer thickness was
(8μm). Photoluminescence (PL) observed a broad peak of porous silicon
(PS) at 690 nm (1.79eV) with full width at half maximum (FWHM) of
about 130 nm while the photoluminescence value of PSO located at 670
nm (1.85eV) with FWHM value of 140 nm. The lower values of resistances
are 95.8 kΩ and 18kΩ of PSO and PS respectively. Response time of
porous silicon detector about (9) second and the recovery time is about
(6.5) second. The response time of UV detector for porous silicon oxide is
(4) second and the recovery time about (8) second.
The (PSO) sample exhibited high detection for incident ultra-violet (UV)
light with and without bios